Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe-ZnMgSSe and InGaN-AlGaN pseudomorphic quantum dots
Identifieur interne : 014271 ( Main/Repository ); précédent : 014270; suivant : 014272Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe-ZnMgSSe and InGaN-AlGaN pseudomorphic quantum dots
Auteurs : RBID : Pascal:99-0099152Descripteurs français
- Pascal (Inist)
- 7866H, 4255P, 7855C, 7866F, 7855E, 7135C, 7820J, 7320D, 7820C, Etude théorique, Densité courant, Point quantique semiconducteur, Laser puits quantique, Semiconducteur III-V, Semiconducteur II-VI, Nanomatériau, Zinc composé, Cadmium composé, Magnésium composé, Exciton, Durée vie radiative, Déplacement spectral, Photoluminescence, Coefficient absorption, Dislocation, Indium composé, Gallium composé, Effet électrooptique, Manganèse.
- Wicri :
- concept : Manganèse.
English descriptors
- KwdEn :
- Absorption coefficients, Cadmium compounds, Current density, Dislocations, Electro-optical effects, Excitons, Gallium compounds, II-VI semiconductors, III-V semiconductors, Indium compounds, Magnesium compounds, Manganese, Nanostructured materials, Photoluminescence, Quantum well lasers, Radiative lifetimes, Semiconductor quantum dots, Spectral shift, Theoretical study, Zinc compounds.
Abstract
A three-dimensional coupled-well excitonic model is presented to explain the observed shift in the photoluminescence excitation spectrum, emission peak from Mn2+ ions, and five-to-six orders reduction of radiative lifetime in ZnS:Mn2+(35 Å) doped nanocrystals. For pseudomorphic cladded nanocrystals such as ZnCdSe-ZnMgSSe, a modified excitonic model predicts enhancements in the absorption coefficient (α∼160000 cm-1) and electric field-dependent index of refraction change (Δn/n∼0.1-0.2), and a significant reduction of radiative lifetime τr∼14.5 fs. Optical gain and threshold current density (Jth) are computed for ZnCdSe-ZnMgSSe and InGaN-AlGaN quantum dot lasers. In the case of InGaN-AlGaN quantum dot lasers, the effect of dislocation-induced traps, enhancement of optical gain due to excitonic transitions, and dot size are considered in the computation of Jth. It is shown that InGaN dots with larger cross sections (∼200×250 Å, such as self-organized dots) and consisting of a trap density of 2.9×1017cm-3 yield Jth of 4500 A/cm2 in comparison to 136 A/cm2 for dots of size 35×35×35 Å. This explains the observation of higher current density in InGaN quantum well lasers having self-organized dots. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Modeling of transitions in Mn<sup>2+</sup> doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe-ZnMgSSe and InGaN-AlGaN pseudomorphic quantum dots</title><author><name sortKey="Jain, F" uniqKey="Jain F">F. Jain</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical and Systems Engineering Department, University of Connecticut, Storrs, Connecticut 06269-2157</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Electrical and Systems Engineering Department, University of Connecticut, Storrs</wicri:cityArea></affiliation></author><author><name sortKey="Huang, W" uniqKey="Huang W">W. Huang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical and Systems Engineering Department, University of Connecticut, Storrs, Connecticut 06269-2157</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Electrical and Systems Engineering Department, University of Connecticut, Storrs</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0099152</idno><date when="1999-03-01">1999-03-01</date><idno type="stanalyst">PASCAL 99-0099152 AIP</idno><idno type="RBID">Pascal:99-0099152</idno><idno type="wicri:Area/Main/Corpus">015950</idno><idno type="wicri:Area/Main/Repository">014271</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Cadmium compounds</term><term>Current density</term><term>Dislocations</term><term>Electro-optical effects</term><term>Excitons</term><term>Gallium compounds</term><term>II-VI semiconductors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Magnesium compounds</term><term>Manganese</term><term>Nanostructured materials</term><term>Photoluminescence</term><term>Quantum well lasers</term><term>Radiative lifetimes</term><term>Semiconductor quantum dots</term><term>Spectral shift</term><term>Theoretical study</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866H</term><term>4255P</term><term>7855C</term><term>7866F</term><term>7855E</term><term>7135C</term><term>7820J</term><term>7320D</term><term>7820C</term><term>Etude théorique</term><term>Densité courant</term><term>Point quantique semiconducteur</term><term>Laser puits quantique</term><term>Semiconducteur III-V</term><term>Semiconducteur II-VI</term><term>Nanomatériau</term><term>Zinc composé</term><term>Cadmium composé</term><term>Magnésium composé</term><term>Exciton</term><term>Durée vie radiative</term><term>Déplacement spectral</term><term>Photoluminescence</term><term>Coefficient absorption</term><term>Dislocation</term><term>Indium composé</term><term>Gallium composé</term><term>Effet électrooptique</term><term>Manganèse</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Manganèse</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A three-dimensional coupled-well excitonic model is presented to explain the observed shift in the photoluminescence excitation spectrum, emission peak from Mn<sup>2+</sup> ions, and five-to-six orders reduction of radiative lifetime in ZnS:Mn<sup>2+</sup>(35 Å) doped nanocrystals. For pseudomorphic cladded nanocrystals such as ZnCdSe-ZnMgSSe, a modified excitonic model predicts enhancements in the absorption coefficient (α∼160000 cm<sup>-1</sup>) and electric field-dependent index of refraction change (Δn/n∼0.1-0.2), and a significant reduction of radiative lifetime τ<sub>r</sub>∼14.5 fs. Optical gain and threshold current density (J<sub>th</sub>) are computed for ZnCdSe-ZnMgSSe and InGaN-AlGaN quantum dot lasers. In the case of InGaN-AlGaN quantum dot lasers, the effect of dislocation-induced traps, enhancement of optical gain due to excitonic transitions, and dot size are considered in the computation of J<sub>th</sub>. It is shown that InGaN dots with larger cross sections (∼200×250 Å, such as self-organized dots) and consisting of a trap density of 2.9×10<sup>17</sup>cm<sup>-3</sup> yield J<sub>th</sub> of 4500 A/cm<sup>2</sup> in comparison to 136 A/cm<sup>2</sup> for dots of size 35×35×35 Å. This explains the observation of higher current density in InGaN quantum well lasers having self-organized dots. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>85</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Modeling of transitions in Mn<sup>2+</sup> doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe-ZnMgSSe and InGaN-AlGaN pseudomorphic quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>JAIN (F.)</s1></fA11><fA11 i1="02" i2="1"><s1>HUANG (W.)</s1></fA11><fA14 i1="01"><s1>Electrical and Systems Engineering Department, University of Connecticut, Storrs, Connecticut 06269-2157</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>2706-2712</s1></fA20><fA21><s1>1999-03-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0099152</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A three-dimensional coupled-well excitonic model is presented to explain the observed shift in the photoluminescence excitation spectrum, emission peak from Mn<sup>2+</sup> ions, and five-to-six orders reduction of radiative lifetime in ZnS:Mn<sup>2+</sup>(35 Å) doped nanocrystals. For pseudomorphic cladded nanocrystals such as ZnCdSe-ZnMgSSe, a modified excitonic model predicts enhancements in the absorption coefficient (α∼160000 cm<sup>-1</sup>) and electric field-dependent index of refraction change (Δn/n∼0.1-0.2), and a significant reduction of radiative lifetime τ<sub>r</sub>∼14.5 fs. Optical gain and threshold current density (J<sub>th</sub>) are computed for ZnCdSe-ZnMgSSe and InGaN-AlGaN quantum dot lasers. In the case of InGaN-AlGaN quantum dot lasers, the effect of dislocation-induced traps, enhancement of optical gain due to excitonic transitions, and dot size are considered in the computation of J<sub>th</sub>. It is shown that InGaN dots with larger cross sections (∼200×250 Å, such as self-organized dots) and consisting of a trap density of 2.9×10<sup>17</sup>cm<sup>-3</sup> yield J<sub>th</sub> of 4500 A/cm<sup>2</sup> in comparison to 136 A/cm<sup>2</sup> for dots of size 35×35×35 Å. 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